论文标题
拓扑绝缘子表面上的多突击散射
Many-impurity scattering on the surface of a topological insulator
论文作者
论文摘要
从理论上讲,我们解决了非磁杂质的随机分布对琐碎和拓扑绝缘子之间界面形成的表面状态的影响。电子与杂质的相互作用是通过可分离的伪电势方法来解释的,该方法使我们能够获得状态密度的封闭表达式。表面状态的光谱特性通过绿色的功能在无序实现中平均评估。出于比较的目的,通过两种不同的自搭配方法,即自洽的诞生近似(SCBA)和相干电位近似(CPA)来计算配置平均的绿色函数。后者通常被认为是研究无序系统光谱特性的最佳单位点理论。然而,尽管大量作品采用SCBA来分析拓扑绝缘子表面上的多发性散射,但文献中对同一问题的CPA研究却很少。在这项工作中,我们发现与CPA预测相比,SCBA高估了杂质随机分布对表面态光谱特性的影响。当增加该疾病的大小时,差异更为明显。
We theoretically address the impact of a random distribution of non-magnetic impurities on the surface states formed at the interface between a trivial and a topological insulator. The interaction of electrons with the impurities is accounted for by a separable pseudo-potential method that allows us to obtain closed expressions for the density of states. Spectral properties of surface states are assessed by means of the Green's function averaged over disorder realizations. For comparison purposes, the configurationally averaged Green's function is calculated by means of two different self-consistent methods, namely the self-consistent Born approximation (SCBA) and the coherent potential approximation (CPA). The latter is often regarded as the best single-site theory for the study of the spectral properties of disordered systems. However, although a large number of works employ the SCBA for the analysis of many-impurity scattering on the surface of a topological insulator, CPA studies of the same problem are scarce in the literature. In this work we find that the SCBA overestimates the impact of the random distribution of impurities on the spectral properties of surface states compared to the CPA predictions. The difference is more pronounced when increasing the magnitude of the disorder.