论文标题
二氧化钒振荡器的电子束修饰
Electron beam modification of vanadium dioxide oscillators
论文作者
论文摘要
该论文介绍了VO2-SWITCH I-V曲线阈值参数的电子梁修饰（EBM）的研究结果以及包含这种开关设备的电路的自振荡频率。真空中的EBM是可逆的，当在EBM处于150 pa的压力时，恢复了参数，剂量为3 c/cm2，开关（VTH）和OFF（VH）和OFF（VH）的电压，以及偏克性ROFF的电压，以及降低至初始值的50％，以及振动频率的50％。考虑到开关通道的金属和半导体阶段的贡献，概述了振荡器EBM物理的特征。控制的修改允许用预设参数形成开关的EBM。同样，它可以在人工振荡性神经网络中使用，以基于频移键值进行模式识别。
The paper presents the results of a study of electron-beam modification (EBM) of VO2-switch I-V curve threshold parameters and the self-oscillation frequency of a circuit containing such a switching device. EBM in vacuum is reversible and the parameters are restored when exposed to air at pressure of 150 Pa. At EBM with a dose of 3 C/cm2, the voltages of switching-on (Vth) and off (Vh), as well as the OFF-state resistance Roff, decrease down to 50% of the initial values, and the oscillation frequency increases by 30% at a dose of 0.7 C/cm2. Features of physics of EBM of an oscillator are outlined considering the contribution of the metal and semiconductor phases of the switching channel. Con-trolled modification allows EBM forming of switches with preset parameters. Also, it might be used in artifi-cial oscillatory neural networks for pattern recognition based on frequency shift keying.
