论文标题
填充分数和对称性损坏石墨烯P-N结的相互作用
Interplay of filling fraction and coherence in symmetry broken graphene p-n junction
论文作者
论文摘要
量子大厅(QH)边缘的相干性在展示电子干涉仪的决定因素上起着决定性因素,该因素有可能实现拓扑量子。具有联合传播自旋和山谷极化QH边缘的石墨烯P-N结(PNJ)是研究电子干涉仪的有前途的平台。但是,尽管尝试通过电导测量进行了一些实验,但在PNJ处的QH边缘的边缘动力学(相干或不一致),在PNJ中,旋转或山谷对称性或两者都被损坏,但仍未探索。在这项工作中,我们在低温(〜10MK)的双石墨门控六边形硝酸硼(HBN)封装了高移动性石墨烯设备中,在低温(〜10MK)下进行了电导的测量以及射击噪声。电导数据表明,对称性在PNJ处损坏的QH边缘遵循自旋选择性平衡。 P和N侧填充因子的函数的射击噪声结果揭示了散射机制与填充因子的独特依赖性。值得注意的是,发现散射是从不连贯到相干方向的完全调节的,而PNJ处的QH边缘数量的增加,对基于石墨烯的电子干涉仪进行了关键的见解。
The coherence of quantum Hall (QH) edges play the deciding factor in demonstrating an electron interferometer, which has potential to realize a topological qubit. A Graphene p-n junction (PNJ) with co-propagating spin and valley polarized QH edges is a promising platform for studying an electron interferometer. However, though a few experiments have been attempted for such PNJ via conductance measurements, the edge dynamics (coherent or incoherent) of QH edges at a PNJ, where either spin or valley symmetry or both are broken, remain unexplored. In this work, we have carried out the measurements of conductance together with shot noise, an ideal tool to unravel the dynamics, at low temperature (~ 10mK) in a dual graphite gated hexagonal boron nitride (hBN) encapsulated high mobility graphene device. The conductance data show that the symmetry broken QH edges at the PNJ follow spin selective equilibration. The shot noise results as a function of both p and n side filling factors reveal the unique dependence of the scattering mechanism with filling factors. Remarkably, the scattering is found to be fully tunable from incoherent to coherent regime with the increasing number of QH edges at the PNJ, shedding crucial insights into graphene based electron interferometer.