论文标题
通过多门清扫测量值确定p-gan闸门下摆中的栅极故障机制
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements
论文作者
论文摘要
在这项工作中，我们通过一种新型的基于多门扫除的方法研究了p-gan门algan/gan hemts的栅极分解机理。在同一设备中，第一次观察并分别鉴定了三种不同的分解机制：金属/p-gan连接分解，p-gan/algan/gan连接分解以及钝化相关的分解。该方法是确定分解机制的有效方法。通过扫描电子显微镜进一步证实了不同的BD机制（SEM）。最后，测量并比较了三种BD机制的温度依赖性。该分析方法也用于具有不同钝化材料的设备中，并显示了其适用性。
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to determine the breakdown mechanisms. The different BD mechanisms were further confirmed by scanning electron microscopy (SEM). Finally, the temperature dependences of the three BD mechanisms were measured and compared. This analysis method was also employed in the devices with a different passivation material and showed its applicability.
