论文标题

非热门雪恩绝缘子中的通用霍尔电导缩放

Universal Hall conductance scaling in non-Hermitian Chern insulators

论文作者

Groenendijk, Solofo, Schmidt, Thomas L., Meng, Tobias

论文摘要

我们调查了二维Chern绝缘子的霍尔电导,该绝缘子与环境相连,从而导致增益和损失。引入生物三相线性响应理论,我们表明,足够强大的增益和损失会导致对霍尔电导的特征性非分析贡献。接近它的发作,该贡献表现出具有3/2功率的通用幂律,其功能是狄拉克质量,化学势和增益强度的函数。我们的结果为在电子传输实验中研究非霍米特拓扑的研究铺平了道路。

We investigate the Hall conductance of a two-dimensional Chern insulator coupled to an environment causing gain and loss. Introducing a biorthogonal linear response theory, we show that sufficiently strong gain and loss lead to a characteristic non-analytical contribution to the Hall conductance. Near its onset, this contribution exhibits a universal power-law with a power 3/2 as a function of Dirac mass, chemical potential and gain strength. Our results pave the way for the study of non-Hermitian topology in electronic transport experiments.

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