论文标题
laalo $ _ {3} $/srtio $ _ {3} $接口的子微米频道中的电子传输
Electronic transport in sub-micrometric channels at the LaAlO$_{3}$/SrTiO$_{3}$ interface
论文作者
论文摘要
纳米级通道在Laalo $ _ {3} $和srtio $ _ {3} $之间实现的界面上实现了一个完美的操场，以探索尺寸对复杂氧化物的电子特性的影响。在这里，我们比较了使用AFM编写技术和常规照片模拟实现的设备的电气传输特性。我们发现，导电路径的横向大小对它们在低温下的运输行为具有很强的影响。我们观察到一个从金属到绝缘状态的交叉，对于较窄的频道，发生在约50 k处，大于100 nm。通过阳性背门的应用可以抑制绝缘的上进性。我们比较了石器图案通道中纳米限制的行为与模型计算的结果，我们得出的结论是，实验观察结果与量子点接触的物理学兼容。
Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric transport properties of devices realized using the AFM-writing technique and conventional photo-lithography. We find that the lateral size of the conducting paths has a strong effect on their transport behavior at low temperature. We observe a crossover from metallic to insulating regime occurring at about 50 K for channels narrower than 100 nm. The insulating upturn can be suppressed by the application of a positive backgate. We compare the behavior of nanometric constrictions in lithographically patterned channels with the result of model calculations and we conclude that the experimental observations are compatible with the physics of a quantum point contact.
