论文标题
应变诱导的拓扑相变的可视化准二维超导体Tase3
Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe3
论文作者
论文摘要
控制从拓扑到正常绝缘体的相变可以允许自旋电流开/关。虽然拓扑相变已通过元素取代在半导体合金中实现，但这种方法需要制备具有各种组成的材料，因此它距离可行的设备应用相当远，这需要可逆操作。在这里，我们使用角度分辨的光发射光谱（ARPE）和自旋分辨ARPE来可视化Quasi-1d超导体Tase3的应变驱动带结构的演化。我们证明，它经历了可逆性应变诱导的拓扑相变，从具有自旋偏振的准拓扑塑料相，旋转拓扑，准1D拓扑表面状态，再到拓扑上的琐碎的半学和带绝缘阶段。准1D超导体Tase3提供了一个合适的平台，用于工程拓扑旋转，例如作为开/关开关，用于旋转电流强大的杂质散射。
Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires the preparation of materials with various compositions, thus it is quite far from a feasible device application, which demands a reversible operation. Here we use angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES to visualize the strain-driven band structure evolution of the quasi-1D superconductor TaSe3. We demonstrate that it undergoes reversible strain-induced topological phase transitions from a strong topological insulator phase with spin-polarized, quasi-1D topological surface states, to topologically trivial semimetal and band insulating phases. The quasi-1D superconductor TaSe3 provides a suitable platform for engineering the topological spintronics, for example as an on/off switch for spin current robust against impurity scattering.
