论文标题
N型（in，fe）中的少数旋转杂质带AS：铁磁半导体的材料透视
Minority-Spin Impurity Band in n-Type (In,Fe)As: A Materials Perspective for Ferromagnetic Semiconductors
论文作者
论文摘要
充分了解N型铁磁半导体（FMS）的特性，与主流P型互补的互补性是半导体旋转型的挑战性的目标，因为N型FMS中的铁磁磁性是理论上的非文章。软X射线角度分辨光发射光谱（SX-ARPES）是一种强大的方法，用于检查FMS中载体诱导的铁磁性的机制。在这里，我们对原型N型FMS（IN，Fe）的SX-ARPES研究揭示了整个带结构，包括FE-3D杂质带（IBS）和宿主INAS，并提供了直接证据证明INAS衍生的传统带（CB）的电子占用。发现少数旋转FE-3D IB位于传导带最小值（CBM）的下方。 IB是由未占用的Fe-3D状态与INAS占用的CBM的杂交形成的，导致CB的旋转极化较大。带有IB的带状结构随频带填充而变化，这不能用刚带的图片来解释，这表明在FMS材料中实现了载体引起的铁磁性的统一图片。
Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically non-trivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe-3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials.
