论文标题
COSB中的低温热电器
Low-Temperature Thermopower in CoSbS
论文作者
论文摘要
我们报告了COSBS单晶中的巨型热电器S = 2.5 mV/k，这种材料在用Ni或SE掺杂时显示出强大的高温热性能。磁场引起的低温热电器的变化指向重价带中载体的电子扩散机理。固有的磁敏感性与围绕间隙边缘周围电子状态的膜状绝缘体样积累一致。这表明巨型热电器源于非相互作用带的温度依赖性重新归一化以及冷却时电子相关性的堆积。
We report giant thermopower S = 2.5 mV/K in CoSbS single crystals, a material that shows strong high-temperature thermoelectric performance when doped with Ni or Se. Changes of low temperature thermopower induced by magnetic field point to mechanism of electronic diffusion of carriers in the heavy valence band. Intrinsic magnetic susceptibility is consistent with the Kondo- Insulator-like accumulation of electronic states around the gap edges. This suggests that giant thermopower stems from temperature-dependent renormalization of the non-interacting bands and buildup of the electronic correlations on cooling.
