论文标题
基于过渡金属二分法源
High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides
论文作者
论文摘要
二维（2D）半导体过渡金属二进制元素（TMDS）是高性能柔性电子产品的良好候选者。但是，迄今为止，这种灵活的现场效应晶体管（FET）的大多数演示都处于微米量表上，并未受益于2D-TMD的短渠道优势。在这里，我们展示了柔性单层MOS2 FET，其迄今为止据报道的最短通道（降至50 nm），并且在1 v漏极到源电压下的电流（最高为470 UA/UM），可与柔性石墨烯或结晶硅FET相当。这是使用一种新的转移方法来实现的，其中最初用纳米级光刻在刚性TMD生长基板上进行了图案，然后用聚酰亚胺（PI）膜覆盖，该薄膜（PI）膜在释放后变成柔性底物，并具有触点和TMD。我们还将此转移过程应用于其他TMD，报告了使用Mose2的第一个灵活FET，并记录了柔性WSE2 FET的电流。这些成就将2D半导体推向了低功率和高性能灵活电子技术的技术。
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.
