论文标题
极化和空间电荷有限的电流III氮化物异质结构纳米线
Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
论文作者
论文摘要
未凝结的α/gan纳米线表现出仅基于（000-1）algan/gan方面的负极化场的形成，表现出P型电导率。基于此纳米线的晶体管显示从欧姆到空间电荷有限传导的低压过渡。数值模拟表明，在三角形横截面上存在高度不对称的应变，这在压电诱导的偏振板电荷在（000-1）的刻面上产生了双重峰。此外，在（000-1）Algan/gan界面处的电荷与从三个表面耗尽的电荷之间存在很强的相互作用，以及与两个半极化{-110-1}方面的相对极化场相互作用。电荷分布和结果传导状态高度相互依赖于多层结构的配置，并且不适合分析模型。
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross-section, which creates a doublet peak in the piezoelectric induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces as well as an interaction with the opposing polarization fields at two semi-polar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on configuration of the multi-layer structure, and is not amenable to an analytical model.
