论文标题

从倒的gan灯发射二极管发射的血浆增强发射

Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode

论文作者

Mastro, Michael A., Kim, Byung-Jae, Freitas, Jr., J. A., Caldwell, Joshua D., Rendell, Ron, Hite, Jennifer, Eddy, Jr., Charles R., Kim, Jihyun

论文摘要

发现在倒置LED表面上分散的银纳米颗粒可通过血浆增强近倾斜的发射。共振表面等离子体耦合导致激子衰减速率显着增强,纳米颗粒的集合提供了一种将耦合能量散射为自由空间辐射的机制。倒立的LED结构采用隧道连接处,以避免标准的厚P+ GAN电流扩散触点层。与标准设计相反,顶部的触点是薄的N ++ Algan层,它使量子很好地进入了银纳米颗粒的边缘场。这种接近度使量子内引起的激子孔充满了夫妇到表面等离子体,从而导致LED的增强带边缘发射。

Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源