论文标题
氮化壳谐振腔液的设计Si底物上排放二极管的二极管
Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates
论文作者
论文摘要
gan谐振腔发光二极管是建立在硅基底物上种植的gan-aln分布的布拉格反射器上的。对于合理设计的谐振腔的GAN二极管，电致发光输出增加了2.5倍。理论计算表明，通过SEM透明金属接触设计，这种增强最多可以增加四次，最多八次用于翻转芯片设计
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to eight times for a flip-chip design
