论文标题
通过准结合状态在单片六角硼硝酸氢硼跨表面中增强单光子发射
Enhancing single photon emission through quasi-bound states in the continuum of monolithic hexagonal boron nitride metasurface
论文作者
论文摘要
玻璃基板上的单片六角硼（HBN）的图案结构，该结构可增强嵌入式单个光子发射器（SPE）的发射，可用于Onchip单光子源高质量的高质量。在这里，我们在发射波长下以超高Q值在连续模式下设计并演示了与准结合状态的单片HBN跨面，以增强HBN中SPE的荧光发射。由于拟议的HBN元图内部的超高电场增强，因此获得了超高的purcell因子（3.3*10^4）。此外，在HBN结构的大部分地区，percell因子也可以大大增强，这使得HBN元表面适合例如整体量子光子学。
A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3*10^4) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.
