论文标题

压力引起的可见发光出现在$ CS_3BI_2BR_9 $中:结构失真对光学行为的影响

Pressure induced emergence of visible luminescence in $Cs_3Bi_2Br_9$: Effect of structural distortion in optical behaviour

论文作者

Samanta, Debabrata, Saha, Pinku, Ghosh, Bishnupada, Chaudhury, Sonu Pratap, Bhattacharya, Sayan, Chatterjee, Swastika, Mukherjee, Goutam Dev

论文摘要

我们报告了三角中$ CS_3BI_2BR_9 $在高压下的室温下的光致发光的出现。发现强度加强压力的增强是由于$ bibr_6 $ contahedra和ISO结构过渡的增加而驱动的。电子带结构的计算显示,在高压阶段的样品是间接带隙半导体。发光峰值分别显示与自由和自被捕获激子的重组有关的签名。两种峰的蓝移直至4.4 GPa,这是由于激子的重组,在放松之前,由于激子寿命的降低,声子散射

We report emergence of photoluminescence at room temperature in trigonal $Cs_3Bi_2Br_9$ at high pressures. Enhancement in intensity with pressure is found to be driven by increase in distortion of $BiBr_6$ octahedra and iso-structural transitions. Electronic band structure calculations show the sample in the high pressure phase to be an indirect band gap semiconductor. The luminescence peak profile show signatures related to the recombination of free and self trapped excitons, respectively. Blue shift of the both peaks till about 4.4 GPa are due to the exciton recombination before relaxation due to the decrease in exciton lifetime with scattering from phonons

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源