论文标题

异常的霍尔电导率和磁性磁力的符号反转,以立方体非连续性抗fiferromagnet mn $ _3 $ pt薄膜

Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films

论文作者

Mukherjee, Joynarayan, Suraj, T. S., Basumatary, Himalaya, Sethupathi, K., Raman, Karthik V.

论文摘要

Mn $ _3 $ x非连续性抗Fiferromagnets中Mn原子的二维kagome自旋晶格结构在探索浆果曲率物理学和相关的非易位磁输液反应的探索方面提供了实质性的兴奋。这些研究中的大部分是在六角形系统中进行的,主要是Mn $ _3 $ SN和MN $ _3 $ GE,而Kagome Planes沿[001]方向具有正常状态。在此手稿中,我们报告了我们在[111]水晶轴正常的kagome平面的立方MN $ _3 $ pt薄膜中的研究。我们的研究揭示了一个孔导电大厅的反应,其异常霍尔电导率(AHC)的非单调温度依赖性从室温下的9 $ω^{ - 1} $ cm $^{ - 1} $增加到29 $ω^{ - 1} $ cm $ $ $ cm $^{ - 1} $ cm $^{ - 1} $ at 100 k,随后降低了一个较低的温度。在磁势测量中也观察到类似的符号逆转。我们将此标志逆转归因于从浆果曲率在高温下占主导地位的AHC的过渡到较低的倾斜的铁磁AHC响应,在较低温度下,低于70 K,这是由于Mn矩从Kagome平面中的重新定向引起的。我们上述导致Mn $ _3 $ pt的薄膜与室温抗磁磁性旋转型的整合。

The two dimensional kagome spin lattice structure of Mn atoms in the family of Mn$_3$X non-collinear antiferromagnets are providing substantial excitement in the exploration of Berry curvature physics and the associated non-trivial magnetotransport responses. Much of these studies are performed in the hexagonal systems, mainly Mn$_3$Sn and Mn$_3$Ge, with the kagome planes having their normal along the [001] direction. In this manuscript, we report our study in the cubic Mn$_3$Pt thin films with their kagome planes normal to the [111] crystal axis. Our studies reveal a hole conduction dominant Hall response with a non-monotonic temperature dependence of anomalous Hall conductivity (AHC), increasing from 9 $Ω^{-1}$cm$^{-1}$ at room temperature to 29 $Ω^{-1}$cm$^{-1}$ at 100 K, followed by a drop and unexpected sign-reversal at lower temperatures. Similar sign reversal is also observed in magnetoresistance measurements. We attribute this sign reversal to the transition from a Berry curvature dominated AHC at high temperature to a weak canted ferromagnetic AHC response at lower temperature, below 70 K, caused by the reorientation of Mn moments out of the kagome plane. Our above results in thin films of Mn$_3$Pt make advances in their integration with room temperature antiferromagnetic spintronics.

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