论文标题

稳定的2 $ h $阶段的实验证据在分层1 $ t'$ -TATE $ _2 $上

Experimental Evidence of Stable 2$H$ Phase on the Surface of Layered 1$T'$-TaTe$_2$

论文作者

Kar, Indrani, Dolui, Kapildeb, Harnagea, Luminita, Kushnirenko, Y., Shipunov, G., Plumb, N. C., Shi, M., Büchner, B., Thirupathaiah, S.

论文摘要

我们报告了tantalum ditelliride的低能电子结构(1 $ t'ub-tate $ _2 $),这是使用角度分辨的光发射光谱镜头(ARPE)和密度功能理论(DFT)的Vertition Metal Dichalcogenide的电荷密度波(CDW)材料之一。我们发现,与诸如tas $ _2 $,tase $ _2 $和ISOSOSSOSTROUTARALIAL COMPTOUND NBTE NBTE $ _2 $之类的Isovalent化合物相比,TATE $ _2 $的费米表面拓扑非常复杂。更重要的是,我们发现1 $ t'$ -TATE $ _2 $的表面电子结构与2 $ h $ -tate $ _2 $具有更多相似之处,而散装电子结构与假设的1 $ t $ -tate $ _2 $具有更相似之处。这些实验观察结果与我们对1 $ t $ - ,2 $ h $ - 和2 $ h $(单层)/1 $ t $ -t $ - 泰特$ _2 $进行的DFT计算进行了彻底的比较。我们进一步注意到,费米表面拓扑独立于180 K的温度,证实了表面上的2 $ h $相位稳定至180 K,并且CDW顺序不是由于费米表面嵌套所致。

We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe$_2$ is quite complicated compared to its isovalent compounds such as TaS$_2$, TaSe$_2$, and isostructural compound NbTe$_2$. More importantly, we discover that the surface electronic structure of 1$T'$-TaTe$_2$ has more resemblance to the 2$H$-TaTe$_2$, while the bulk electronic structure has more resemblance to the hypothetical 1$T$-TaTe$_2$. These experimental observations are thoroughly compared with our DFT calculations performed on 1$T$-, 2$H$- and 2$H$ (monolayer)/1$T$- TaTe$_2$. We further notice that the Fermi surface topology is temperature independent up to 180 K, confirming that the 2$H$ phase on the surface is stable up to 180 K and the CDW order is not due to the Fermi surface nesting.

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