论文标题
基于电荷的紧凑模型，用于MOSFET中1/F噪声的偏置变异性
Charge-Based Compact Model for Bias-Dependent Variability of 1/f Noise in MOSFETs
论文作者
论文摘要
MOSFET中低频噪声（LFN）的变异性依赖性依赖性。在模拟/RF应用中常用的中度至大型晶体管显示1/f样噪声光谱是由随机电报噪声（RTN）的叠加导致的。载波数量和移动性波动被认为是低频噪声的主要原因。尽管对LFN偏置依赖性的影响进行了充分的研究，但这些噪声机制导致LFN变异性的偏置依赖性的方式知之甚少。 LFN变异性已显示在弱反转（亚阈值）中最大化，而增加的排水偏置也增加了LFN的可变性。但是，尚未提出紧凑的模型来详细解释这种偏置依赖性。结合LFN的基于电荷的配方，本文提出了一个新的LFN变异性偏置依赖性模型。与来自中等大小的NMO和PMOS晶体管的实验数据进行比较，可以洞悉载体数量和迁移率波动机制如何影响LFN变异性的偏置依赖性。
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise (RTN). Carrier number and mobility fluctuations are considered as the main causes of low frequency noise. While their effect on the bias-dependence of LFN has been well investigated, the way these noise mechanisms contribute to the bias-dependence of variability of LFN has been less well understood. LFN variability has been shown to be maximized in weak inversion (sub-threshold), while increased drain bias also increases LFN variability. However, no compact model has been proposed to explain this bias-dependence in detail. In combination with the charge-based formulation of LFN, the present paper proposes a new model for bias-dependence of LFN variability. Comparison with experimental data from moderately-sized NMOS and PMOS transistors at all bias conditions provides insight into how carrier number and mobility fluctuation mechanisms impact the bias-dependence of LFN variability.
