论文标题
基于SI的硬X射线检测器中，光子能量衰减层（PAL）的光子能量衰减层（PAL）的蒙特卡洛建模和设计
Monte Carlo Modeling and Design of Photon Energy Attenuation Layers (PALs) for 10-30x Quantum Yield Enhancement in Si-based Hard X-ray Detectors
论文作者
论文摘要
高量子产量，高空间分辨率和短响应时间长期以来一直是物理学的重要领域。闪烁是一种普遍的方法，但以各种方式有限。直接检测到高能X射线光子一直是今天的挑战，这主要是由于光子到光子转换的效率低。市售的最先进的SI直接检测产品（例如SI电荷耦合器件（CCD））对于> 10keV光子的效率低下。在这里，我们提出了蒙特卡洛模拟结果和分析，以引入高效但简单的高能量X射线检测概念，并具有显着增强的光子到电子转换效率，由两层：顶部高Z光子能量衰减层（PAL）和底部SI检测器组成。我们使用光子能量降低转换的原理，其中高能量X射线光子能量通过非弹性散射降低至10kev，适用于Si有效的光电吸收。我们的蒙特卡洛模拟结果表明，使用SI上的PBTE PAL可以实现10-30倍的量子产率，这可能会使用PAL增强的SI CMOS图像传感器来推进高分辨率高效X射线检测。
High-energy (>20keV) X-ray photon detection at high quantum yield, high spatial resolution and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuator layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to and below 10keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that 10-30x increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.
