论文标题

高能离子在HIPIMS沉积的Ti膜中FCC和ω晶相的生长中的作用

Role of energetic ions in the growth of fcc and ω crystalline phases in Ti films deposited by HiPIMS

论文作者

Dellasega, David, Mirani, Francesco, Vavassori, Davide, Conti, Claudia, Passoni, Matteo

论文摘要

钛(Ti)由于其出色的特性,在薄膜技术中被广泛利用,该技术通常会导致产生α-相(HCP)Ti膜。在这项工作中,我们研究了通过膜形成物种的不同类型和能量沉积的Ti膜的相位演变。为了研究不同的等离子体物种环境,使用常规的直流磁控溅射(DCM)和高功率脉冲磁铁溅射(HIPIMS)来生长具有不同厚度的膜。此外,还执行具有不同底物偏置电压US(0 V,-300 V和-500 V)的HIPIMS沉积以研究不同的离子能量范围。用不同的表征技术分析了沉积膜的微结构,形态和残余应力,以及DCMS和HIPIMS等离子体组成。 DCMS样品仅表现出Tiα相,并显示出拉伸的残留应力随厚度降低。就HIPIMS样品而言,随着厚度的增加,可以观察到残余应力的压缩拉伸压缩性(CTC)行为。具体而言,沉积在低能离子条件下(US = 0 V)的膜显示Ti FCC阶段的存在,最大厚度约为370 nm。以不同的方式,在高能量条件下沉积的膜(US = -300 V和-500 V)分别显示了大于260和330 nm的TiΩ相的成核。考虑到不同的沉积条件,讨论了这些不寻常的TI阶段的形成。

Titanium (Ti), due to its excellent properties, is widely exploited in thin film technology that usually leads to the production of α-phase (hcp) Ti films. In this work, we investigate the phase evolution of Ti films deposited by varying type and energy of the film-forming species. To investigate different plasma species environments, films with different thicknesses are grown by using conventional Direct Current Magnetron Sputtering (DCMS) and High Power Impulse Magnetron Sputtering (HiPIMS). Furthermore, HiPIMS depositions with different substrate bias voltage US (0 V, -300 V and -500 V) are performed to investigate different ion energy ranges. Microstructure, morphology and residual stress of the deposited films, as well as the DCMS and HiPIMS plasma composition, are analysed with different characterization techniques. The DCMS samples exhibit the Ti α-phase only and show a tensile residual stress decreasing with thickness. As far as HiPIMS samples are concerned, a compressive-tensile-compressive (CTC) behavior is observed for residual stresses as thickness increases. Specifically, films deposited in low energy ion conditions (US =0 V) show the presence of the Ti fcc phase up to a maximum thickness of about 370 nm. Differently, films deposited under high energy conditions (US = -300 V and -500 V) show the nucleation of the Ti ω-phase for thicknesses greater than 260 and 330 nm, respectively. The formation of these unusual Ti phases is discussed considering the different deposition conditions.

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