论文标题
在激光器上写的片上波导上的连贯的光记忆BAESD
Coherent Optical Memory Baesd on A Laser-written On-chip Waveguide
论文作者
论文摘要
量子存储器是建造大型量子网络的核心设备。对于可扩展且方便的实用应用，集成的光学记忆，尤其是芯片光学记忆是至关重要的要求，因为它们很容易与其他芯片设备集成。在这里，我们报告了基于在稀土离子掺杂晶体表面构造的类型IV波导（即$ \ Mathrm {eu^{3+}} $：$ \ mathrm {y_2sio_5} $）的表面（即$ \ mathrm {eu^{3+}} $）。光学转换的属性（$ \ mathrm {{^7} f {_0} \ rightArow {^5} d {_0}} $的$ \ mathrm {eu^{3+}} $的属性与表面波形内部的$ \ mathrm {eu^{3+}} $保存在一起。自旋波原子频率梳存储在IV型波导内显示。该设备的可靠性通过$ {97 \ pm 1 \％} $之间的高干扰可见性在检索脉冲和参考脉冲之间。开发的片上光学内存为集成量子节点铺平了道路。
Quantum memory is the core device for the construction of large-scale quantum networks. For scalable and convenient practical applications, integrated optical memories, especially on-chip optical memories, are crucial requirements because they can be easily integrated with other on-chip devices. Here, we report the coherent optical memory based on a type-IV waveguide fabricated on the surface of a rare-earth ion-doped crystal (i.e. $\mathrm{Eu^{3+}}$:$\mathrm{Y_2SiO_5}$). The properties of the optical transition ($\mathrm{{^7}F{_0}\rightarrow{^5}D{_0}}$) of the $\mathrm{Eu^{3+}}$ ions inside the surface waveguide are well preserved compared to those of the bulk crystal. Spin-wave atomic frequency comb storage is demonstrated inside the type-IV waveguide. The reliability of this device is confirmed by the high interference visibility of ${97\pm 1\%}$ between the retrieval pulse and the reference pulse. The developed on-chip optical memory paves the way towards integrated quantum nodes.
