论文标题
幽灵抗横断是由2D异质结构中频段杂交引起的
Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
论文作者
论文摘要
在二维异质结构中，具有不同晶格参数的晶体原子层可以直接堆叠在一个。原子晶格与周期性不同的原子晶格的紧密接近可能会导致新现象。对于umklapp过程，这打开了层间umklapp散射的可能性，其中相互作用是通过Momenta向相邻层中的晶格转移或从晶格的转移介导的。使用角度分辨的光发射光谱研究在INSE异质结构上研究石墨烯，我们提供了证据表明，尽管没有预期的Moir/'e-e-e-e-e-e-e-e-e-tos诱导的复制频段的证据，但在仅预期的Brillouin区域的相邻层中，来自相邻层的频段之间的杂种。这种现象表现为Inse电子色散中的“幽灵”抗横断。应用于一系列合适的2DM对范围，这种层间umklapp杂交现象可用于创建其电子状态的强烈混合，从而为扭曲控制的带状结构工程提供了新的工具。
In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.
