论文标题

工程藻类在量子光学应用方面的绝缘体

Engineering AlGaAs-on-insulator towards quantum optical applications

论文作者

Placke, Marlon, Ramelow, Sven

论文摘要

砷铝铝具有高度理想的特性,可用于集成参数相互作用:大型材料非线性,通过外观生长和光刻术通过宽带低损耗操作的大型纳米镜结构进行成熟的纳米镜结构。但是,只有在将半导体嵌入介电覆层以产生高度狭窄的波导中时,才能释放出其记录强度非线性相互作用的全部潜力。通过对此类的模拟,我们提出了二阶和三阶对生成,可以改善最先进的量子光学源,并使得可以访问强参数光子 - 光子非线性的新型机制。

Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band gap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second and third order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon-photon nonlinearities accessible.

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