论文标题
源中的超薄sige修改了薄膜隧道的性能
Ultra-Thin SiGe in the Source Modifies Performance of Thin-Film Tunneling FET
论文作者
论文摘要
在这项工作中，N型薄膜隧道FET的源结构经过精心设计，以获得更好的性能。基于硅的TFET来源，将超薄的SIGE与Si一起使用。将两个结构与常规TFET进行了比较，一个结构位于源的Si顶部，另一个位于另一个si。仿真批准这些结构可以减少阈值的摇摆，几次不流动，并增加启用比率。研究了传导和瓦朗斯带的带图，并使用带隧道（BTBT）的频带生成速率来找到更好的性能。我们在源源较宽的带盖中找到了SI的电流流。 SIGE的GE摩尔分数各不相同，并研究了其对TFET性能的影响。探索了两种结构的SIGE厚度，以获得SIGE的最佳厚度。
In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-based TFET. Two structures are compared with conventional TFET, one, SiGe is located on the top of Si in the source and another one in reverse. Simulations approve these structures can reduce sub-threshold swing, OFF-current several times, and increase the ON-OFF ratio. Band diagram for conduction and valance bands are investigated and band to band tunneling (BTBT) generation rate is used to find better performance. We find current flows at Si in the source with the wider bandgap. Ge mole fraction of SiGe is varied and its effects on the performance of TFET are studied. The SiGe thickness for both structures is explored to obtain the best thickness for SiGe.
