论文标题
半导体 - 布拉赫形式主义：从迪拉克·费米斯（Dirac Fermions）向高谐波产生的推导和应用
Semiconductor-Bloch Formalism: Derivation and Application to High-Harmonic Generation from Dirac Fermions
论文作者
论文摘要
我们重新启动半导体Bloch方程，强调了与浆果连接的紧密联系。我们严格的推导揭示了除了经常被认为是对电标和极化相关的边际项外，对电流的进一步贡献。在具有强大的脱铲或偶极子元素元素的强烈依赖性时，额外的贡献变得很大。我们将形式主义应用于高谐波一代，以作为狄拉克金属。在某些频率下，额外的术语增加了频率依赖性的发射强度（高谐波频谱），将总信号更改为10倍。
We rederive the semiconductor Bloch equations emphasizing the close link to the Berry connection. Our rigorous derivation reveals the existence of two further contributions to the current, in addition to the frequently considered intraband and polarization-related interband terms. The extra contributions become sizable in situations with strong dephasing or when the dipole-matrix elements are strongly wave-number dependent. We apply the formalism to high-harmonic generation for a Dirac metal. The extra terms add to the frequency-dependent emission intensity (high-harmonic spectrum) significantly at certain frequencies changing the total signal up to a factor of 10.
