论文标题

顺磁性自旋大厅磁磁性

Paramagnetic spin Hall magnetoresistance

论文作者

Oyanagi, Koichi, Gomez-Perez, Juan M., Zhang, Xian-Peng, Kikkawa, Takashi, Chen, Yao, Sagasta, Edurne, Chuvilin, Andrey, Hueso, Luis E., Golovach, Vitaly N., Bergeret, F. Sebastian, Casanova, Fèlix, Saitoh, Eiji

论文摘要

自旋霍尔磁阻(SMR)是指金属膜的电阻变化,反映了膜上附着的磁铁的磁化方向。这种现象的机制是在传导 - 电子旋转与界面上的磁化之间的自旋交换。 SMR已被用来读取用小磁铁编写的信息并检测磁化动力学,但它仅限于磁铁。磁相变的磁性阶段或磁相变的不稳定性是必不可少的。在这里,我们报告了副磁性绝缘子GD $ _ {3} $ ga $ _ {5} $ o $ $ _ {12} $(GGG)中的SMR观察,而无需自发磁化与PT膜相结合。顺磁SMR可以归因于作用于GGG中局部旋转的自旋转移扭矩。我们确定了PT/GGG界面处的自旋扭矩和自旋叉散射的效率,并证明这些量可以用外部磁场调节。结果阐明了在金属/顺磁绝缘子界面处自旋传输的机制,该机制可对丙二磁系统中自旋状态的自旋操纵进行新的见解。

Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems.

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