论文标题
单个原子层同位素改性硼的杰出热导率
Outstanding Thermal Conductivity of Single Atomic Layer Isotope-Modified Boron Nitride
论文作者
论文摘要
具有高热电导率（K）的材料对于解决高度集成和微型化的现代设备的废热挑战很有价值。在此，我们报告了原子上稀薄的纯六边形硝化硼（BN）的第一个合成，并且它是所有半导体和电绝缘体中最高的K之一。富含11B的单个原子层（1L）在室温下具有1009 W/MK的K。我们发现同位素工程主要抑制BN中的平面光学（ZO）声子散射，随后降低了ZO和横向声学（TA）和纵向声音（LA）声子之间的声学散射。另一方面，将厚度减少到单个原子层会减小层间相互作用，因此，平面声音（ZA）声子的umklapp散射，尽管这种厚度诱导的k增强功能并不像自然发生的bn那样剧烈。凭借其许多独特的特性，原子薄的单异位型BN有望在范德华（Van der Waals）（VDW）设备和未来的灵活电子设备上进行热管理。原子上薄的同位素工程也可能在尚未探索的2D材料中开放其他吸引人的应用和机会。
Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k up to 1009 W/mK at room temperature. We find that the isotope engineering mainly suppresses the out-of-plane optical (ZO) phonon scatterings in BN, which subsequently reduces acoustic-optical scatterings between ZO and transverse acoustic (TA) and longitudinal acoustic (LA) phonons. On the other hand, reducing the thickness to single atomic layer diminishes the interlayer interactions and hence Umklapp scatterings of the out-of-plane acoustic (ZA) phonons, though this thickness-induced k enhancement is not as dramatic as that in naturally occurring BN. With many of its unique properties, atomically thin monoisotopic BN is promising on heat management in van der Waals (vdW) devices and future flexible electronics. The isotope engineering of atomically thin BN may also open up other appealing applications and opportunities in 2D materials yet to be explored.
