论文标题
高载流子移动性外延与单区硒生长的PTSE2薄膜
High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization
论文作者
论文摘要
几层PTSE2膜是用于高速电子，旋转三位型和光电探测器应用的有前途的候选人。然而，大面积高度结晶膜的可再现制造仍然是一个挑战。在这里，我们报告了使用预测的铂层的单区域硒化的外上一行的PTSE2膜的制造。我们研究了生长条件对从不同初始厚度的PT层制备的膜的结构和电性能的影响。对于在升高温度（600°C）下生长的PTSE2层的最佳结果。这些薄膜显示出远距离内订购的签名，类似于外延生长。在这些薄膜中，由Hall效应测量结果确定的荷载迁移率最高为24 cm2/v。
Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films.
