论文标题
扭曲石墨烯多层中的抗病毒状态
Antichiral states in twisted graphene multilayers
论文作者
论文摘要
物质拓扑阶段的出现揭示了各种观察到的边界现象，例如在二维（2D）拓扑绝缘子边缘发现的手性和螺旋模式。还可以预测2D半学的抗病态状态，即，还可以预测由反向传播的散装电流所补偿的相对边缘的重质边缘模式，但迄今为止，尚未在固态系统中实现此类状态。在这里，我们提出了一个程序，通过通过轨道Moiré上层结构，平面磁场和层间偏置电压组合结合每一层的电子狄拉克孔光谱，以在扭曲的范德华多层中实现抗病态状态。特别是，我们证明了一个由石墨烯/两层六角形硝酸硼组成的扭曲的范德华异质结构[（HBN）$ _ 2 $]/石墨烯将显示8 t的平面磁场处的抗病毒状态，旋转角度为0.2 $^{\^{\^{\^{\ fircici fircience flucte of。我们的发现为固态系统以及量子工程的超材料中的抗病毒状态提供了可控的程序。
The advent of topological phases of matter revealed a variety of observed boundary phenomena, such as chiral and helical modes found at the edges of two-dimensional (2D) topological insulators. Antichiral states in 2D semimetals, i.e., copropagating edge modes on opposite edges compensated by a counterpropagating bulk current, are also predicted, but, to date, no realization of such states in a solid-state system has been found. Here, we put forward a procedure to realize antichiral states in twisted van der Waals multilayers, by combining the electronic Dirac-cone spectra of each layer through the combination of the orbital moiré superstructure, an in-plane magnetic field, and inter-layer bias voltage. In particular, we demonstrate that a twisted van der Waals heterostructure consisting of graphene/two layers of hexagonal boron nitride [(hBN)$_2$]/graphene will show antichiral states at in-plane magnetic fields of 8 T, for a rotation angle of 0.2$^{\circ}$ between the graphene layers. Our findings engender a controllable procedure to engineer antichiral states in solid-state systems, as well as in quantum engineered metamaterials.
