论文标题
将紫外线激光器整合到III二氮平台中的光子电路中
Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
论文作者
论文摘要
紫外线激光器通过二氮化合物在带有硝酸盐（GAN）的硅平台上单一集成到光子电路中，作为主波引导层。光子电路由微电路和滑轮波导组成，该波导由外耦合光栅终止。在连续波激发下，我们测量最多3500的质量因素。在脉冲激发下观察到激光从374 nm到399 nm，达到$ 0.14〜 \ text {mj/cm}^2 $每脉冲的低阈值能量（阈值峰值$ 35〜 \ text {kw/cm}^2 $）。在磁盘和波导之间的50 nm的小间隙的外耦合光栅上观察到了大约200个大约200的大峰到背景动态。这些设备在操作波长方面以GAN可以实现的极限运行。
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of $0.14 ~\text{mJ/cm}^2$ per pulse (threshold peak powers of $35 ~\text{kW/cm}^2$). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.
