论文标题
VSE2 / BI2SE3系统中的平面频带和上层建筑的紧急情况
Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system
论文作者
论文摘要
认为无散的平谱带被认为是实现各种物质量子状态的基本要素,包括高温超导率1-4和分数量子霍尔效应5-6。但是,具有这种特殊电子状态的材料非常罕见,并且经常表现出非常复杂的带结构。在这里,我们通过角度分辨光发射光谱和扫描隧道显微镜在亚单层VSE2 / BI2SE3异质结构中报告了具有绝缘基态的平坦带的出现。平面带沿着KLL和KZ Momena无散,填充了整个Brillouin区域,并且表现出一个复杂的圆形二色性信号,可在Brillouin区域的几个点逆转符号。这些特性以及VSE2中的Moiré模式的存在表明,平面条带不是微不足道的疾病或限制效应,甚至可能在拓扑上是不平凡的。另一个有趣的发现是,平面频带不会改变狄拉克点周围的dirac锥。此外,我们发现,扁平带和BI2SE3的狄拉克表面状态与电子掺杂相反。这打开了一种控制光电流的自旋纹理以及异质结构的传输特性的新方法。这些功能使这款平坦的频带与以前的发现可以明显区别,我们的方法可以应用于其他系统开放有希望的途径,以实现拓扑材料中强烈相关的量子效应。
Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moiré patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron doping. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials.