论文标题
含Si的拓扑狄拉克半学CAAL2SI2的电子结构
Electronic structure of a Si-containing topological Dirac semimetal CaAl2Si2
论文作者
论文摘要
在发现拓扑量子材料的发现中，人们一直在理论上预测和实验观察到各种拓扑绝缘子和半学。但是，其中只有很少有硅，这是电子行业中最广泛使用的元素。最近，预测三元化合物CAAL2SI2是拓扑狄拉克半学，托有洛伦兹对称易受竞选的准粒子，具有强烈倾斜的锥形带分散体。在这项工作中，通过使用高分辨率角度分辨光发射光谱（ARPES），我们研究了CAAL2SI2的综合电子结构。沿着KZ方向观察到了一对拓扑狄拉克交叉，与从头算的计算很好地吻合，证实了化合物的拓扑狄拉克半学性质。我们的研究扩展了含Si的化合物的拓扑材料家族，这些家族在实现具有拓扑量子状态的低成本，无毒的电子设备方面具有巨大的应用潜力。
There has been an upsurge in the discovery of topological quantum materials, where various topological insulators and semimetals have been theoretically predicted and experimentally observed. However, only very few of them contains silicon, the most widely used element in electronic industry. Recently, ternary compound CaAl2Si2 has been predicted to be a topological Dirac semimetal, hosting Lorentz-symmetry-violating quasiparticles with a strongly tilted conical band dispersion. In this work, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we investigated the comprehensive electronic structure of CaAl2Si2. A pair of topological Dirac crossings is observed along the kz direction, in good agreement with the ab initio calculations, confirming the topological Dirac semimetal nature of the compound. Our study expands the topological material family on Si-containing compounds, which have great application potential in realizing low-cost, nontoxic electronic device with topological quantum states.
