论文标题

带有二阶拓扑角状态的空腔量子电动力学

Cavity Quantum Electrodynamics with Second-Order Topological Corner State

论文作者

Xie, Xin, Zhang, Weixuan, He, Xiaowu, Wu, Shiyao, Dang, Jianchen, Peng, Kai, Song, Feilong, Yang, Longlong, Ni, Haiqiao, Niu, Zhichuan, Wang, Can, Jin, Kuijuan, Zhang, Xiangdong, Xu, Xiulai

论文摘要

拓扑光子学提供了一种新的范式,用于研究具有稳健性的腔量子电动力学。在这项工作中,我们演示了单个量子点与二阶拓扑角状态之间的耦合。基于二阶拓扑角状态,设计并制造了带有量子点的GAAS平板中的拓扑光子晶体腔。观察到了接近2000年的高质量因子的角状态和边缘状态的共存。当量子点与角状态共振时,观察到光致发光强度和发射速率的增强。该结果使拓扑应用于空腔量子电动动力学,为量顶设备提供了量子信息处理的方法。

Topological photonics provides a new paradigm in studying cavity quantum electrodynamics with robustness to disorder. In this work, we demonstrate the coupling between single quantum dots and the second-order topological corner state. Based on the second-order topological corner state, a topological photonic crystal cavity is designed and fabricated into GaAs slabs with quantum dots embedded. The coexistence of corner state and edge state with high quality factor close to 2000 is observed. The enhancement of photoluminescence intensity and emission rate are both observed when the quantum dot is on resonance with the corner state. This result enables the application of topology into cavity quantum electrodynamics, offering an approach to topological devices for quantum information processing.

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