论文标题

可调的一维平台中排斥相互作用引起的电子配对

Electron pairing induced by repulsive interactions in tunable one-dimensional platforms

论文作者

Shavit, Gal, Oreg, Yuval

论文摘要

我们提出了一个由一维系统组成的方案,具有排斥性相互作用,其中绑定对的形成可以易于调谐。通过电容耦合,将主要的电子量子量线耦合到二级强质量强的Fermionic系统中,这是内在的电子电阻,而是促进电线的内部电源,从而占据了界面的形式。内在的排斥相互作用倾向于有利于这些对的电荷密度波的形成,但是我们发现超导相关性在有限的参数状态下占主导地位。我们的分析表明,配对相位在相空间的中间区域稳定,包括两个附加阶段:一个脱钩相,其中主电线保持无间隙和一个TRION相,其中主电子对结合了二级系统的电荷载体。调整初级相互作用的强度以及二级系统的化学潜力,可以控制不同的相变。我们的方法考虑了次要自由程度之间的相互作用,并强烈依赖于它们的高度相关性。讨论了我们的提议向二维的扩展,仅发现排斥的远程超导顺序的条件。我们的物理描述由一个简单的模型给出,具有最少成分的简单模型,可能有助于阐明各种低维强相关材料中的配对机制。

We present a scheme comprised of a one-dimensional system with repulsive interactions, in which the formation of bound pairs can take place in an easily tunable fashion.By capacitively coupling a primary electronic quantum wire of interest to a secondary strongly-correlated fermionic system, the intrinsic electron-electron repulsion may be overcome, promoting the formation of bound electron pairs in the primary wire. The intrinsic repulsive interactions tend to favor the formation of charge density waves of these pairs, yet we find that superconducting correlations are dominant in a limited parameter regime. Our analysis show that the paired phase is stabilized in an intermediate region of phase space, encompassed by two additional phases: a decoupled phase, where the primary wire remains gapless, and a trion phase, where a primary electron pair binds a charge carrier from the secondary system. Tuning the strength of the primary-secondary interaction, as well as the chemical potential of the secondary system, one can control the different phase transitions. Our approach takes into account the interactions among the secondary degrees of freedom, and strongly relies on their highly correlated nature. Extension of our proposal to two dimensions is discussed, and the conditions for a long-range superconducting order from repulsion only are found. Our physical description, given by a simple model with a minimal amount of ingredients, may help to shed some light on pairing mechanism in various low-dimensional strongly correlated materials.

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