论文标题
Si（100）-2x1-Cl表面上的氯插入和操纵
Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation
论文作者
论文摘要
我们使用扫描隧道显微镜在Si（100）-2x1表面上插入并操纵单个氯原子。创建了两个对象 - 两个二聚体行之间的凹槽中的一个Cl原子，以及硅二聚体上的桥梁键合Cl。改变电压极性会导致对象相互转换。物体在77 K处的各向异性运动是由两种不同的扩散机制介导的：跳跃和人群样运动。将Cl原子插入在两个二聚体行之间的凹槽中，导致在第三层Si原子上形成悬空的键。在阳性样品电压偏置下，第一个对象是积极带电的，而第二个物体可以取决于硅样品掺杂，可以中性或负电荷。
We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2x1 surface using a scanning tunneling microscope. Two objects were created - a Cl atom in a groove between two dimer rows, and bridge-bonded Cl on a silicon dimer. Changing the voltage polarity leads to conversion of the objects into each other. Anisotropic movement of the objects at 77 K is mediated by two different diffusion mechanisms: hopping and crowdion-like motion. Insertion of a Cl atom in a groove between two dimer rows leads to the formation of a dangling bond on a third-layer Si atom. At positive sample voltage bias, the first object is positively charged, while the second object can be neutral or negatively charged depending on silicon sample doping.
