论文标题
截至后光伏特瞬变的半导体的表面特性
Surface properties of semiconductors from post-illumination photovoltage transient
论文作者
论文摘要
半导体的游离表面通过改变其表面电压（表面带弯曲）来响应光。使用开尔文探针可以轻松检测该表面光电压。建模在关闭光线后表面光电压的瞬时时间行为可以用作表征半导体的几种关键电子特性的手段，该半导体在众多电子设备应用（例如晶体管和太阳能电池）中具有至关重要的重要性。在本文中，我们为这种时间行为开发了一个模型，并使用它来表征几个半导体的层和纳米线。我们的结果表明，以前被认为是对数衰减的结果大约是如此。由于Kelvin探针方法的已知有限频率带宽，因此以前的大多数基于开尔文探针的方法都限于缓慢响应的半导体。我们提出的模型扩展了此范围的适用性。
Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This surface photovoltage may be easily detected using a Kelvin probe. Modeling the transient temporal behavior of the surface photovoltage after the light is turned off may serve as a means to characterize several key electronic properties of the semiconductor, which are of fundamental importance in numerous electronic device applications, such as transistors and solar cells. In this paper, we develop a model for this temporal behavior and use it to characterize layers and nanowires of several semiconductors. Our results suggest that what has previously been considered to be a logarithmic decay is only approximately so. Due to the known limited frequency bandwidth of the Kelvin probe method, most previous Kelvin-probe-based methods have been limited to slow responding semiconductors. The model we propose extends this range of applicability.
