论文标题

单电子量子点中的能量水平和静水压力

Energy levels in a single-electron quantum dot with hydrostatic pressure

论文作者

Caicedo-Ortiz, H. E., Férnandez, H. O. Castañeda, Santiago-Cortés, E., Mantilla-Sandoval, D. A.

论文摘要

在本文中,我们介绍了静液压压力对带电子点的量子点能量水平的影响。使用无限电位井和二维谐波振荡器对量子点进行建模,并通过第二量化的形式求解。提出了用于实施非静水压力控制的量子门的方案。

In this article we present a study of the effects of hydrostatic pressure on the energy levels of a quantum dot with an electron. A quantum dot is modeled using an infinite potential well and a two-dimensional harmonic oscillator and solved through the formalism of second quantization. A scheme for the implementation of a quantum NOT gate controlled with hydrostatic pressure is proposed.

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