论文标题
铁磁半导体（GA，FE）SB异质结构的平面自旋阀磁磁耐药物具有较高的温度
Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature
论文作者
论文摘要
我们在（ga，fe）sb / inas（厚度$ t_ \ mathrm {inas} $ nm） /（ga，ga，fe）sb trilayer杂质中，在（ga，ga，fe）中，（ga，fe）s s s s s s s s sb s s sb s s sb / feemagnecie（ga，ga，fe）是ferromagnetic（fmsecie formagnectecon） （$ t_ \ mathrm {c} $）。在带有$ T_ \ MATHRM {INAS} $ = 3 nm的样品中，在3.7 K处清楚地观察到具有开放式小环的MR曲线，该样本源自平行 - （GA，FE）SB层的平行 - 反平行磁化切换，（GA）SB层和（GA，FE）SB / INAS sb / inas Intface的旋转散射。由于界面散射的增强，MR比率从0.03增加到1.6％（从0.03升至1.6％），$ t_ \ mathrm {inas} $（从9 nm）增加。这是Fe掺杂的FMS异质结构中自旋阀效应的首次演示，为这些高$ T_ \ Mathrm {C} $ FMSS的设备应用铺平了道路。
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3 nm, which originates from the parallel - antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing $t_\mathrm{InAs}$ (from 9 to 3 nm) due to the enhancement of the interface scattering. This is the first demonstration of the spin-valve effect in Fe-doped FMS heterostructures, paving the way for device applications of these high- $T_\mathrm{C}$ FMSs.
