论文标题
具有高运行性能的货架稳定量子点发光二极管
Shelf-stable quantum-dot light-emitting diodes with high operational performance
论文作者
论文摘要
量子点发光二极管（QLEDS）有望高性能和具有成本效益的电动发光设备。但是，目前忽略了QLEDS的货架稳定性，即用于实际应用的必不可少的。在这里，我们揭示了最新的QLEDS表现出异常的搁板年龄行为，即表现的改善（正衰老），其次是绩效恶化（负老化）。机理研究表明，封装丙烯酸树脂中的有机酸会诱导原位反应，从而同时改善了在正相生阶段的界面激子淬灭的界面激子。原位反应的进展导致负衰老。受这些发现的启发，我们设计了电子传输双层结构，该结构既可以提高电导率又抑制了界面激子淬火。该设计使货架稳定QLEDS具有高运行性能，即，在存储180天后，在存储180天后，外部量子效率（> 20.0％）和超长的运营寿命（1,000 cd M-2）的可忽视变化（> 20.0％）和超长的操作寿命（T95：5,500小时）。我们的工作为QLEDS商业化的道路铺平了道路。
Quantum-dot light-emitting diodes (QLEDs) promise high-performance and cost-effective electroluminescent devices. However, shelf stability of QLEDs, a must for practical applications, is currently overlooked. Here we reveal that the state-of-the-art QLEDs exhibit abnormal shelf-ageing behaviours, i.e., improvements in performance (positive ageing), followed by deterioration of performance (negative ageing). Mechanism studies show that the organic acids in the encapsulation acrylic resin induce in-situ reactions, which simultaneously improve electrical conductance and minimize interfacial exciton quenching at the positive-ageing stage. Progression of the in-situ reactions results in negative ageing. Inspired by these findings, we design an electron-transporting bi-layer structure, which delivers both improved electrical conductivity and suppressed interfacial exciton quenching. This design enables shelf-stable QLEDs with high operational performance, i.e., neglectable changes of external quantum efficiency (>20.0%) and ultra-long operational lifetime (T95: 5,500 hours at 1,000 cd m-2) after storage for 180 days. Our work paves the way towards the commercialization of QLEDs.
