论文标题

抗fiferromagnet-semeductor van der waals异质结构:激子与磁有序的相互作用

Antiferromagnet-semiconductor van der Waals heterostructures: interlayer interplay of exciton with magnetic ordering

论文作者

Onga, Masaru, Sugita, Yusuke, Ideue, Toshiya, Nakagawa, Yuji, Suzuki, Ryuji, Motome, Yukitoshi, Iwasa, Yoshihiro

论文摘要

范德华(VDW)异质结构由于其丰富的材料组合而引起了极大的兴趣。二维磁铁的发现为磁VDW Heterointerfaces提供了一个新的平台。然而,对磁性杂音界面的研究仅限于具有铁磁表面的研究。在这里,我们报告了使用分层内 - 抗磁力磁性MPSE3(M = M = MN,FE)和单层过渡金属二核苷(TMDS)的磁VDW杂音界面。我们发现MPSE3中的抗铁磁过渡温度下方的单层TMD中的激子峰异常上升,从而捕获了Interlayer exciton-magnon耦合的特征。这是一个从单材料到异性空间扩展的概念。此外,这种耦合在很大程度上取决于平面磁性结构和堆叠方向,显示了其对磁接口的敏感性。我们的发现提供了一个机会,可以调查跨接口的不同材料中基本激发之间的相互作用,并搜索磁VDW Heterointerfaces的新功能。

Van der Waals (vdW) heterostructures have attracted great interest because of their rich material combinations.The discovery of two-dimensional magnets has provided a new platform for magnetic vdW heterointerfaces; however, research on magnetic vdW heterointerfaces has been limited to those with ferromagnetic surfaces. Here we report a magnetic vdW heterointerface using layered intralayer-antiferromagnetic MPSe3 (M=Mn, Fe) and monolayer transition metal dichalcogenides (TMDs). We found an anomalous upshift of the excitonic peak in monolayer TMDs below the antiferromagnetic transition temperature in the MPSe3, capturing a signature of the interlayer exciton-magnon coupling. This is a concept extended from single materials to heterointerfaces. Moreover, this coupling strongly depends on the in-plane magnetic structure and stacking direction, showing its sensitivity to their magnetic interfaces. Our finding offers an opportunity to investigate interactions between elementary excitations in different materials across interfaces and to search for new functions of magnetic vdW heterointerfaces.

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