论文标题
通过在钛酸EU1-XLAXTIO3薄膜的完整相图中掺杂电基态和磁接地态
Controlling the electrical and magnetic ground states by doping in the complete phase diagram of titanate Eu1-xLaxTiO3 thin films
论文作者
论文摘要
eutio3是一个绝缘子和latio3，莫特绝缘子，均为反铁磁，分别为过渡温度〜5.5 k和〜160 K。在这里，我们报告了由氧化物分子束外延和X = 0至1的EU1-XLAXTIO3薄膜的合成。整个范围内的膜具有高晶体质量，没有相分离，使我们进行了运输测量，以研究其电气和磁性。从X = 0.03到0.95，EU1-XLAXTIO3膜显示出电子作为电荷载体传导，载体密度和迁移率的差异与纯EUTIO3和LATIO3的绝缘性质相反。遵循丰富的相图，膜的磁接地状态随着LA兴奋剂水平的增加而变化，EU1-XLAXTIO3从抗磁管绝缘子变为抗铁磁金属，铁磁金属，一种顺磁金属，将其返回到抗毒素磁性绝缘体。这些新兴的特性反映了频带结构的演变，主要是在eu2+逐渐被LA3+取代时在费米水平附近的Ti T2G带上。这项工作阐明了这种方法，用于设计强相关氧化物中的电气和磁性特性，并完成了钛酸EU1-XLAXTIO3的相图。
EuTiO3, a band insulator, and LaTiO3, a Mott insulator, are both antiferromagnetic with transition temperatures ~ 5.5 K and ~ 160 K, respectively. Here, we report the synthesis of Eu1-xLaxTiO3 thin films with x = 0 to 1 by oxide molecular beam epitaxy. The films in the full range have high crystalline quality and show no phase segregation, allowing us carry out transport measurements to study their electrical and magnetic properties. From x = 0.03 to 0.95, Eu1-xLaxTiO3 films show conduction by electrons as charge carriers, with differences in carrier densities and mobilities, contrary to the insulating nature of pure EuTiO3 and LaTiO3. Following a rich phase diagram, the magnetic ground states of the films vary with increasing La-doping level, changing Eu1-xLaxTiO3 from an antiferromagnetic insulator to an antiferromagnetic metal, a ferromagnetic metal, a paramagnetic metal, and back to an antiferromagnetic insulator. These emergent properties reflect the evolutions of the band structure, mainly at the Ti t2g bands near the Fermi level, when Eu2+ are gradually replaced by La3+. This work sheds light on this method for designing the electrical and magnetic properties in strongly-correlated oxides and completes the phase diagram of the titanate Eu1-xLaxTiO3.
