论文标题
掺杂引起的旋转大厅比在A15相的ta型β-W薄膜中提高了
Doping-induced spin Hall ratio enhancement in A15-phase, Ta-doped Beta-W thin films
论文作者
论文摘要
随着自旋装置变得越来越普遍，发现具有大型自旋效果的无PT材料的愿望正在增加。以前证明，纯W的亚稳态A15结构化变体的βW具有与PT相当的电荷旋转效率，并且可以预测βW（TA）合金应该更有效。 Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with CO2FE6B2在具有CO4FE4B2的设备中的SHR几乎是SHR的两倍。这项工作表明，通过优化沉积参数和底物，最佳W3TA合金的制造应可行，为商业上可持续的，PT Free，Pertrtronic设备打开了大门。
As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.
