论文标题
电气可调的室温滞后跨度在底板MOS $ _2 $ FETS中
Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS$_2$ FETs
论文作者
论文摘要
顺时针旋转到抗锁滞后时，用石墨烯和MOS $ _2 $通道的现场效应晶体管（FET）的电流传输特性（FET）中的逆时针滞后交叉具有很大的希望。然而，这种跨界仅显示在高温下表现出来。 In this work, for the first time, we demonstrate room temperature hysteresis crossover in few-layer MoS$_2$ FETs by using a gate-drain underlap design to induce a differential response from traps at the MoS$_2$-HfO$_2$ channel-gate dielectric interface to applied gate bias.界面陷阱驱动的抗锁滞后在高栅极FET中的高门电压下的外观可以明确地归因于存在下层的存在，因为在有和没有底板区域的晶体管上是在相同的MOS $ _2 $通道薄片上制造的。底层设计还可以使抗锁磁滞窗口（乘以140 $ \ times $）以及具有施加的排水偏置和底线长度的跨界门电压（乘2.6 $ \ times $）。以不同的扫描速率和温度（RT，45 $^\ circc $ c和65 $^\ circe $ c）在环境和真空条件下的转移曲线的全面测量有助于划分adsorbates，界面陷阱和大量HFO $ _2 $ _2 $ traps to clack-clockswise和anti-clockswise。
Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS$_2$ channels holds significant promise for non-volatile memory applications. However such crossovers have been shown to manifest only at high temperature. In this work, for the first time, we demonstrate room temperature hysteresis crossover in few-layer MoS$_2$ FETs by using a gate-drain underlap design to induce a differential response from traps at the MoS$_2$-HfO$_2$ channel-gate dielectric interface to applied gate bias. The appearance of interface trap-driven anti-clockwise hysteresis at high gate voltages in underlap FETs can be unambiguously attributed to the presence of an underlap since transistors with and without the underlap region were fabricated on the same MoS$_2$ channel flake. The underlap design also enables room temperature tuning of the anti-clockwise hysteresis window (by 140$\times$) as well as the crossover gate voltage (by 2.6$\times$) with applied drain bias and underlap length. Comprehensive measurements of the transfer curves in ambient and vacuum conditions at varying sweep rates and temperatures (RT, 45 $^\circ$C and 65 $^\circ$C) help segregate the quantitative contributions of adsorbates, interface traps, and bulk HfO$_2$ traps to the clockwise and anti-clockwise hysteresis.
