论文标题
石墨烯-NBSE $ _2 $垂直异质结构中临时相关状态的本地表征和工程
Local characterization and engineering of proximitized correlated states in graphene-NbSe$_2$ vertical heterostructures
论文作者
论文摘要
使用由单层石墨烯，单层HBN和NBSE $ _2 $组成的Van der waals垂直异质结构，我们对不同配置中诱导的相关状态进行了局部表征。在4.6 K的温度下，我们已经表明，通过接近效应，可以从NBSE2中诱导超导性和电荷密度波。通过施加垂直磁场，我们成像了Abrikosov涡流晶格，并提取了临近超导石墨烯的相干长度。我们进一步表明，可以通过在石墨烯和NBSE $ _2 $之间添加单层HBN来完全阻止诱导的相关状态，这证明了隧道屏障和正常金属和超导体之间的表面条件的重要性。
Using a van der Waals vertical heterostructure consisting of monolayer graphene, monolayer hBN and NbSe$_2$, we have performed local characterization of induced correlated states in different configurations. At a temperature of 4.6 K, we have shown that both superconductivity and charge density waves can be induced in graphene from NbSe2 by proximity effects. By applying a vertical magnetic field, we imaged the Abrikosov vortex lattice and extracted the coherence length for the proximitized superconducting graphene. We further show that the induced correlated states can be completely blocked by adding a monolayer hBN between the graphene and the NbSe$_2$, which demonstrates the importance of the tunnel barrier and surface conditions between the normal metal and superconductor for the proximity effect.
