论文标题

Intervalley深色激子和单层中的Trions的多径光学重组WSE $ _2 $

Multipath optical recombination of intervalley dark excitons and trions in monolayer WSe$_2$

论文作者

Liu, Erfu, van Baren, Jeremiah, Liang, Ching-Tarng, Taniguchi, Takashi, Watanabe, Kenji, Gabor, Nathaniel M., Chang, Yia-Chung, Lui, Chun Hung

论文摘要

已知在过渡金属二分法中(TMD)中的激子和Trions(或激子 - 核酸盐)主要通过Interavalley过渡衰减。跨不同山谷的电子孔重组也可以在激子动力学中起重要作用,但是在单层TMD中很少观察到Intervalley转变,因为它们违反了动量的保护。在这里,我们揭示了深色激子和Trions的间隔重组,并通过单层WSE $ _2 $中的多个路径进行了重组。我们观察到Intervalley Dark激子,可以通过缺陷散射或手性 - 光发射来重组。我们还透露,Trion可以通过Interavalley或Intervalley Electron -Hole孔重组衰减,进入两个不同的最终山谷状态。尽管这两个路径是能量退化的,但我们可以通过在磁场下提升山谷退化来区分它们。另外,分别与区域中心和区域角色的手性声子耦合,以产生不同的声子复制品。观察到的深色激子和Trions的多径光学衰减提供了对TRION的内部量子结构以及与单层谷半导体中缺陷和手性声子的复杂激子相互作用的深入了解。

Excitons and trions (or exciton-polarons) in transition metal dichalcogenides (TMDs) are known to decay predominantly through intravalley transitions. Electron-hole recombination across different valleys can also play a significant role in the excitonic dynamics, but intervalley transitions are rarely observed in monolayer TMDs, because they violate the conservation of momentum. Here we reveal the intervalley recombination of dark excitons and trions through more than one path in monolayer WSe$_2$. We observe the intervalley dark excitons, which can recombine by the assistance of defect scattering or chiral-phonon emission. We also reveal that a trion can decay in two distinct paths - through intravalley or intervalley electron-hole recombination - into two different final valley states. Although these two paths are energy degenerate, we can distinguish them by lifting the valley degeneracy under a magnetic field. In addition, the intra- and inter-valley trion transitions are coupled to zone-center and zone-corner chiral phonons, respectively, to produce distinct phonon replicas. The observed multipath optical decays of dark excitons and trions provide much insight into the internal quantum structure of trions and the complex excitonic interactions with defects and chiral phonons in monolayer valley semiconductors.

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