论文标题

MOS2几层的室温下在室温下发射强大的B-Exciton发射:Ag纳米层膜嵌入玻璃基质中

Robust B-exciton emission at room temperature in few-layers of MoS2:Ag nanoheterojunctions embedded into a glass matrix

论文作者

Sarkar, Abdus Salam, Konidakis, Ioannis, Demeridou, Ioanna, Serpetzoglou, Efthymis, Kioseoglou, George, Stratakis, Emmanuel

论文摘要

在二维(2D)钼二硫化物(MOS2)晶体中定制光致发光(PL)特性对于在Valleytronic,纳米光子和光电应用中的使用至关重要。尽管已经致力于增强或操纵MOS2单层中的激发量发射,但在很大程度上尚未探索MOS2中的激素发射。在这里,我们提出了一个新型的纳米型直接结系统,该系统以非刻板学过程制备,以增强和控制这种发射。它基于将几层MOS2掺入等离磷酸银玻璃(AGPO3)基质中的基础。结果表明,除了A和B激子的发射增强外,B- excitonic发射还主导了PL强度。特别是,与对照MOS2样品相比,我们观察到B激子发射的几乎六倍。室温下的这种增强的PL归因于增强的激子 - 样品耦合,并且由超快时间分辨的光谱法支持,该光谱揭示了在Ag纳米颗粒-MOS2-MOS2-MOS2纳米骨上发生的等离子体增强电子传递。我们的结果提供了一个很好的途径,可以量身定制几层MOS2的发射特性,这些途径可以在与B激子一起工作的新兴valleytronic设备中找到应用。

Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely unexplored. Here, we put forward a novel nano-heterojunction system, prepared with a non-lithographic process, to enhance and control such emission. It is based on the incorporation of few-layers MoS2 into a plasmonic silver metaphosphate glass (AgPO3) matrix. It is shown that, apart from the enhancement of the emission of both A and B excitons, the B-excitonic emission dominates the PL intensity. In particular, we observe an almost six-fold enhancement of the B exciton emission, compared to control MoS2 samples. This enhanced PL at room temperature is attributed to an enhanced exciton-plasmon coupling and it is supported by ultrafast time-resolved spectroscopy that reveals plasmon-enhanced electron transfer that takes place in Ag nanoparticles-MoS2 nanoheterojunctions. Our results provide a great avenue to tailor the emission properties of few-layers MoS2, which could find application in emerging valleytronic devices working with B excitons.

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