论文标题

单层钒掺杂的钨二硫化物:室温稀释磁性半导体

Monolayer Vanadium-doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor

论文作者

Zhang, Fu, Zheng, Boyang, Sebastian, Amritanand, Olson, Hans, Liu, Mingzu, Fujisawa, Kazunori, Pham, Yen Thi Hai, Jimenez, Valery Ortiz, Kalappattil, Vijaysankar, Miao, Leixin, Zhang, Tianyi, Pendurthi, Rahul, Lei, Yu, Elías, Ana Laura, Wang, Yuanxi, Alem, Nasim, Hopkins, Patrick E., Das, Saptarshi, Crespi, Vincent H., Phan, Manh-Huong, Terrones, Mauricio

论文摘要

通过将自旋极化过渡金属替代掺杂到半导体系统中,实现的稀磁半导体,以实验性调制自旋动态,以对新型磁电磁或磁光设备具有巨大的希望,尤其是用于二维系统的二维系统,例如过渡金属Dichalcogenides,例如加入Valley valley valley valley valley velley velley velley velley valley velley veles activate valley veles activate valley veles active valley。 2D磁性的实际应用可能需要室温操作,空气稳定性,并且(对于磁性半导体)能够在没有掺杂剂聚集的情况下达到最佳掺杂水平。在这里,我们描述了通过可靠的单步薄膜硫化方法在极宽的钒浓度上产生的半导体钒掺杂的二硫键单层获得的室温铁磁序,最多可在5%的%时以最小的掺杂剂聚集来生产。这些单层会发展为p型转运,这是钒掺入的函数,并迅速达到双极性。亚铁磁剂在中间钒的浓度上达到少数原子百分比的峰值,并且较高浓度的降低,这与透射谷谷谷瓦泛天间隔的轨道杂交引起的淬火是一致的,这是由透射电子显微镜,磁化标准和第一原则的透射式谷化剂量峰值一致的。室温二维稀释磁性半导体提供了一个新的组件,以扩大范德华异质结构的功能范围,并将半导体磁性2D异质结构带入实际应用领域。

Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here we describe room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of a few atomic percent and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry and first-principles calculations. Room-temperature two-dimensional dilute magnetic semiconductors provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures them into the realm of practical application.

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