论文标题
BALN用于III二硝酸盐紫外线发光二极管：未居量的电子阻滞层
BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer
论文作者
论文摘要
研究了未凝固的Baln电子阻滞层（EBL），以替代发光二极管（LED）中的常规Algan EBL。在Algan EBL的情况下，对LED的多种影响对LED的输出特性的影响表明，LED性能对P掺杂水平的依赖性很大，而对Baln EBL的P掺杂水平的依赖较少。结果，我们为LED提出了一个未填充的Baln EBL，以避免P掺杂问题，这是Algan EBL的重大技术挑战。与具有高掺杂的Algan EBL相比，所提出的Baln EBL结构在不掺杂的情况下仍然具有较高的能力，并改善了孔注入。这项研究为解决紫外线LED结构时提供了可行的途径，可以解决电子泄漏和孔注入问题不足。
The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.
