论文标题

宽带炎症辐射的单通路CR:ZNSE放大器

A Single-pass Cr:ZnSe Amplifier for Broadband Infared Undulator Radiation

论文作者

Andorf, M. B., Lebedev, V. A., Piot, P.

论文摘要

提出了基于高掺杂的锌硫化铬(CR:ZNSE)晶体的放大器,以增加电子束穿过解散磁体后发出的脉冲能量。主要的动机是通过在粒子加速器存储环中循环的光束发出的放大的波动辐射,以增加粒子梁的相空间密度---一种称为光学随机冷却(OSC)的技术。本文使用一个简单的四个能级模型来估计Cr:ZnSe的单通路增益,并提出数值计算,并结合波磁辐射的波播仿真,以估计放大的波动器波数据的预期性能。

An amplifier based on a highly-doped Chromium Zinc-Selenide (Cr:ZnSe) crystal is proposed to increase the pulse energy emitted by an electron bunch after it passes through an undulator magnet. The primary motivation is a possible use of the amplified undulator radiation emitted by a beam circulating in a particle accelerator storage ring to increase the particle beam's phase-space density---a technique dubbed Optical Stochastic Cooling (OSC). This paper uses a simple four energy level model to estimate the single-pass gain of Cr:ZnSe and presents numerical calculations combined with wave-optics simulations of undulator radiation to estimate the expected properties of the amplified undulator wave-packet.

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