论文标题
wurtzite INP微型遇险风格：从外观到室温激光
Wurtzite InP Microdisks: from Epitaxy to Room-Temperature Lasing
论文作者
论文摘要
半导体的亚电能激素晶体相具有高性能电流装置的巨大潜力，归功于其扩展的可调直接带隙范围。但是，以良好的质量和纳米线尺寸限制的质量合成这些材料仍然难以捉摸。在这项工作中，探索了用于光学应用的绝缘体上的Wurtzite INP微型遇险和相关几何形状的外观。这是通过鳍片的选择性面积生长和拉链诱导的外延侧向过度生长的精致组合来实现的，这可以使各种形状的晶体在精确的位置进行协整。种植的材料具有高相纯度和出色的光学质量，其特征是茎和$ $ $ -PL。在室温下的光泵激光是在365 $μj/cm^2 $的微型阈值中实现的，因此证明了对广泛的光子应用的希望。
Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for optical applications is explored. This is achieved by an elaborate combination of selective area growth of fins and a zipper-induced epitaxial lateral overgrowth, which enables co-integration of diversely shaped crystals at precise position. The grown material possesses high phase purity and excellent optical quality characterized by STEM and $μ$-PL. Optically pumped lasing at room temperature is achieved in microdisks with a lasing threshold of 365 $μJ/cm^2$, thus demonstrating promise for a wide range of photonic applications.
